P. Douglas Yoder

Computational Electronics and Photonics | Georgia Institute of Technology | Atlanta, Georgia

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P. Douglas Yoder
Georgia Institute of Technology
School of Electrical and Computer Engineering
Atlanta, GA 30332
+1 404 385 2652
doug dot yoder at gatech dot edu

Selected Publications

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P. D. Yoder, J. M. Higman, J. Bude and K. Hess, Monte Carlo Simulation of Hot Electron Transport in Si Using a Unified Pseudopotential Description of the Crystal, Semiconductor Science and Technology 7, pp. B357-359, 1992.

P. D. Yoder, V. D. Natoli, and Richard M. Martin, Ab-Initio Analysis of the Electron-Phonon Interaction in Si, Journal of Applied Physics 73, pp. 4378-4383, 1993.

Abramo et al. (47 authors, including P. D. Yoder), A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport in silicon, IEEE Transactions on Electron Devices 41, pp. 1646-1654, 1994.

P. D. Yoder and K. Hess, First-Principles Monte Carlo simulation of transport in Si, Semiconductor Science and Technology 9, pp. 852-854, 1994.

P. D. Yoder, K. Gaertner, and W. Fichtner, A generalized Ramo-Shockley theorem for classical to quantum transport at arbitrary frequencies, Journal of Applied Physics 79, pp. 1951-1954, 1996.

P. D. Yoder, K. Gaertner, U. Krumbein, and W. Fichtner, Optimized Terminal Current Calculation for Monte Carlo Device Simulation, IEEE Transactions on Computer Aided Design 16, pp. 1082-1087, Oct. 1997.

P. D. Yoder, U. Krumbein, K. Gaertner, N. Sasaki and W. Fichtner, Statistical enhancement of terminal current estimation for Monte Carlo device simulation, VLSI Design 6, pp. 303-306, 1998.

F. M. Bufler, P. D. Yoder, and W. Fichtner, Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs, VLSI-Design 13, No.1-4, pp.163-167, 2001.

N. Asli, A. F. Shulekin, P. D. Yoder, M. I. Vexler, I. V. Grekhov, and P. Seegebrecht, Impact of oxide damage on the light emission properties of MOS tunnel structures, Solid-State Electronics 48, pp. 731-737, 2004.

P. D. Yoder, M. I. Vexler, A. F. Shulekin, N. Asli, S. V. Gastev, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, and H. Zimmermann, Luminescence Spectra of an Al/SiO2/p-Si Tunnel Metal Oxide Semiconductor Structure, Journal of Applied Physics 98, pp. 83511-83523, 2005.

P. D. Yoder and E. J. Flynn, Linear theory of the quasi-unipolar photodiode, IEEE Journal of Lightwave Technology 24, pp. 1937-1945, 2006.

N. Terizhandur and P. D. Yoder, Perfectly Matched Layer Boundary Conditions for Quantum Phase Space Transport, Physics Letters A 367, pp. 288-290, 2007.

P. D. Yoder and E. J. Flynn, Quasi-unipolar photodetection for enhanced bandwidth and optical saturation power, Applied Physics Letters 91, pp. 062114-062116, 2007.

P. D. Yoder, Bandwidth and Charge Balancing of the Partially Depleted Absorber Photodiode, IEEE Journal of Quantum Electronics 43, pp. 992-997, 2007.

S.-C. Shen, Y. Zhang, D.-W. Yoo, J.-B. Limb, J.-H. Rhou, P. D. Yoder and R. D. Dupuis, Performance of Deep Ultraviolet GaN Avalanche Photodiodes, IEEE Photonics Technology Letters 91, pp. 1744-1746, 2007.

N. Z. Butt, P. D. Yoder, and M. A. Alam, Soft Error Trends and New Physical Model for Ionization Dose Effects in Double Gate Z-RAM Cell, IEEE Transactions on Nuclear Science 54, pp. 2363-2370, 2007.

A. Venkatachalam, P. D. Yoder, B. Klein and A. Kulkarni, Nitride Band-Structure Model in a Quantum Well Laser Simulator, Optical and Quantum Electronics 40, pp. 295-299, 2008.

S. Sridharan, A. Venkatachalam and P. D. Yoder, Electrothermal Analysis of AlGaN/GaN High Electron Mobility Transistors, Journal of Computational Electronics 7, pp. 236-239, 2008.

E. Avrutin, T. Stanko, B. Witzigmann and P. D. Yoder, Introduction to the OQE special issue on numerical simulation of optoelectronic devices, Optical and Quantum Electronics 40, pp. 1075-1076, 2008.

E. Moore, T. Utschig, K. Haas, B. Klein, P. D. Yoder, Y. Zhang and M. Hayes, Evaluating the integration of Tablet PC technology for the enhancement of synchronous distributed education courses, IEEE Transactions on Learning Technologies 1, pp. 105-116, 2008.

S. Sridharan and P. D. Yoder, Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN, IEEE Electron Device Letters 29, pp. 1190-1192, 2008.

R. D. Dupuis, J.-H. Ryou, S.-C. Shen, P. D. Yoder, Y. Zhang, H. J. Kim, S. Choi and Z. Lochner, Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes, Journal of Crystal Growth 310, pp. 5217-5222, 2008.

S. Sridharan, P. D. Yoder, S.-C. Shen, J.-H. Ryou and R.D. Dupuis, Geiger Mode Simulation of GaN Homojunction Avalanche Photodetectors, Physica Status Solidi C 6, pp. S662-S665, 2009.

J.-H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. S. Kim, S. Choi, H. J. Kim, and R.D. Dupuis, Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells, IEEE Journal of Special Topics on Quantum Electronics 15, pp. 1080-1091, 2009. (INVITED PAPER).

H. Pan, A. Beling, H.Chen, J. C. Campbell and P. D. Yoder, A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance, IEEE Journal of Lightwave Technology 27, pp. 4435-4439, 2009.

S. Choi, H. J. Kim, Y. Zhang, X. Bai, D. Yoo, J. Limb, J.-H. Ryou, S.-C. Shen, P. D. Yoder and R. D. Dupuis, Geiger-mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates, IEEE Photonics Technology Letters 21, pp. 1526-1528, 2009.

A. Venkatachalam, B. Klein, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, Design Strategies for InGaN-based Green Lasers, IEEE Journal of Quantum Electronics 46, pp. 238-245, 2010.

M. Messer, J. H. Panchal, V. Krishnamurthy, B. Klein, P. D. Yoder, J. K. Allen and F. Mistree, Model Selection Under Limited Information Using a Value-of-information-based Indicator, Journal of Mechanical Design 132, pp. 121008-121020, 2010.

H. J. Kim, S. Choi, S.-S. Kim, J.-H. Ryou, P. D. Yoder, R.D. Dupuis, A. M. Fischer and F. A. Ponce, Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes, Applied Physics Letters 96, pp. 101102-101104, 2010.

P. D. Yoder, M. Grupen and R. K. Smith, Demonstration of Intrinsic Tristability in Double-Barrier Resonant Tunneling Diodes with the Wigner Transport Equation, IEEE Transactions on Electron Devices 57, pp. 3265-3274, 2010.

J. Liu, Y. Zhang, Z. Lochner, S.-S. Kim, H. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Wei, K. Wei, K. Sun, A. Fischer and F. Ponce, Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition, Journal of Crystal Growth 272, pp. 272-277, 2011.

P. D. Yoder, S. Sridharan, Samuel Graham, S.-S. Shen, J.-H. Ryou and R. D. Dupuis, Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations, Physica Status Solidi C 8, pp. 2285-2287, 2011.

Z. Lochner, H. J. Kim, Y.-C. Lee, Y. Zhang, S. Choi, S.-C. Shen, P. D. Yoder, J.-H. Ryou and R. D. Dupuis, NpN-GaN/InxGa1-xN heterojunction bipolar transistor on free-standing GaN substrate, Applied Physics Letters 99, pp. 193501-193503, 2011.

Md. M. Satter and P. D. Yoder, Lateral Carrier Confinement and Threshold Current Reduction in Scaled GaN Based QW Lasers with Deeply Etched Mesa, Optical and Quantum Electronics 42, pp. 747-754, 2011.

S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhang, Z. Lochner, P. D. Yoder, and J.-H. Ryou, GaN/InGaN Heterojunction Bipolar Transistors with fT > 5.3 GHz, IEEE Electron Device Letters. 32, pp. 1065-1067, 2011.

Z. Lochner, H.-J. Kim, Y.-C. Lee, Y. Zhang, S. Choi, S.-C. Shen, P. D. Yoder, J.-H. Ryou and R. D. Dupuis, NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate, Applied Physics Letters 99, pp. 193501-193503, 2011.

S. Sridharan, A. Christensen, A. Venkatachalam, S. Graham and P. D. Yoder, Temperature and Doping Dependent Anisotropic Stationary Electron Velocity in Bulk Wurtzite GaN, IEEE Electron Device Letters 32, pp. 1522-1524, 2011.

Md. M. Satter, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, Design and Analysis of 250nm AlInN Laser Diodes on AlN Substrates using Tapered Electron Blocking Layers, IEEE Journal of Quantum Electronics 48, pp. 703-711, 2012.

Md. M. Satter, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, Polarization Matching in AlGaN-Based Multiple Quantum Well Deep Ultraviolet Laser Diodes on AlN Substrates using Quaternary AlInGaN Barriers, IEEE Journal of Lightwave Technology 30, pp. 3017-3025, 2012.

S. Choi, M.-H. Ji, J. Kim, H. J. Kim, Md. M. Satter, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, A. M. Fischer and F. Ponce, Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers, Applied Physics Letters 101, pp. 703-711, 2012.

Md. M. Satter, Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis and P. D. Yoder, AlGaN-Based Vertical Injection Laser Diodes using Inverse Tapered P-waveguide for Efficient Hole Transport, IEEE Journal of Quantum Electronics, in press, 2014.

P. D. Yoder and S. Sridharan, Beyond intervalley transfer: damped Bloch oscillation and negative differential drift velocity at very high fields in wide bandgap III-nitride materials, Physica Status Solidi C, in press, 2014.