Georgia Institute of Technology · School of Electrical and Computer Engineering
doug.yoder@gatech.edu · +1 404 385 2652
GT
Computational Electronics & Photonics Group P. Douglas Yoder · Georgia Tech ECE
Publications

Selected publications

Work spanning computational transport, nanoelectronics, III-nitride optoelectronics, avalanche photodiodes, and nonlinear device physics.

Publication record

Students advised by Prof. Yoder are shown in boldface

Recent publications

2026. A. Billah and P. D. Yoder, “Impurity band formation in doped AlN: A Green’s function approach,” AIP Advances 16 (4), 045003 (2026).

Green’s-function treatment of donor impurity-band formation, dispersion, density of states, and effective mass in n-type AlN.

DOI

2026. H. Cui, P. D. Yoder, and W. A. Doolittle, “First-Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys,” physica status solidi (b) 263, e202500050 (2026).

First-principles study connecting alloy composition to structural, elastic, and piezoelectric properties in wurtzite Sc-alloy superlattices.

DOI

2025. J. Sculley and P. D. Yoder, “Nucleation and Propagation of Traveling Charge Domains in a Planar AlGaN/GaN Triode Structure,” physica status solidi (a) 222, 2500094 (2025).

Develops a quantitative model of traveling-charge-domain nucleation, identifies diffusion as the microscopic process inhibiting nucleation, and demonstrates a GaN triode architecture for Gunn-mode oscillation using stochastic Boltzmann transport simulation.

DOI

2023. W. A. Doolittle, C. M. Matthews, H. Ahmad, K. Motoki, S. Lee, A. Ghosh, E. N. Marshall, A. L. Tang, P. Manocha, and P. D. Yoder, “Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis,” Applied Physics Letters 123, 070501 (2023).

Connects alternative AlN synthesis and doping physics to ultra-wide-bandgap electronics and optoelectronics, including impurity-band formation and the unusual AlN valence-band structure.

DOI

2020. K. Mehta and P. D. Yoder, “Philosophy of Approaching a Laser Design Problem: Illustrated by the Design of Ultraviolet Vertical-Cavity Laser Diodes,” physica status solidi (a) 217, 2000154 (2020).

A design-centered treatment of numerical simulation and physical reasoning for ultraviolet vertical-cavity laser diodes.

DOI

2020. P. Chen, Y. J. Park, Y.-S. Liu, T. Detchprohm, P. D. Yoder, S.-C. Shen, and R. D. Dupuis, “Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures,” Journal of Electronic Materials 49 (4) (2020).

Examines growth-temperature ramping, quantum-well morphology, and stimulated emission in ultraviolet AlGaN/InGaN multiple-quantum-well structures.

DOI

2020. P. D. Yoder and D. K. Ferry, “Higher-order terms in asymptotic expansions of electron transport parameters in nanoscale devices,” Journal of Computational Electronics 19, 550–565 (2020).

Extends asymptotic descriptions of non-equilibrium electron transport relevant to nanoscale semiconductor-device simulation.

2019. K. Mehta et al., including P. D. Yoder, “Thermal Design Considerations for III-N Vertical-Cavity Surface-Emitting Lasers Using Electro-Opto-Thermal Numerical Simulations,” IEEE Journal of Quantum Electronics (2019).

Uses self-consistent electro-opto-thermal simulation to identify the dominant thermal-resistance mechanisms in III-nitride VCSEL architectures and evaluate design changes for higher optical output.

DOI

2019. M. V. Fischetti, P. D. Yoder, M. M. Khatami, G. Gaddemane, and M. L. Van de Put, “Hot electrons in Si lose energy mostly to optical phonons: Truth or myth?,” Applied Physics Letters 114, 222104 (2019).

Full-band Monte Carlo analysis challenges a long-standing assumption about hot-electron energy relaxation in silicon, showing a major role for acoustic phonons in energy loss.

DOI

2018. K. Mehta et al., including P. D. Yoder, “Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation,” IEEE Journal of Quantum Electronics 54 (6) (2018).

DOI

2018. K. Mehta et al., including P. D. Yoder, “Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices,” IEEE Journal of Quantum Electronics 54 (4), 2400507 (2018).

DOI

For citation counts and the most current indexed bibliography, see P. D. Yoder on Google Scholar, sorted by publication date .

Selected earlier publications

  1. P. D. Yoder, J. M. Higman, J. Bude and K. Hess, Monte Carlo Simulation of Hot Electron Transport in Si Using a Unified Pseudopotential Description of the Crystal, Semiconductor Science and Technology 7, pp. B357-359, 1992.
  2. P. D. Yoder, V. D. Natoli, and Richard M. Martin, Ab-Initio Analysis of the Electron-Phonon Interaction in Si, Journal of Applied Physics 73, pp. 4378-4383, 1993.
  3. Abramo et al. (47 authors, including P. D. Yoder), A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport in silicon, IEEE Transactions on Electron Devices 41, pp. 1646-1654, 1994.
  4. P. D. Yoder and K. Hess, First-Principles Monte Carlo simulation of transport in Si, Semiconductor Science and Technology 9, pp. 852-854, 1994.
  5. P. D. Yoder, K. Gaertner, and W. Fichtner, A generalized Ramo-Shockley theorem for classical to quantum transport at arbitrary frequencies, Journal of Applied Physics 79, pp. 1951-1954, 1996.
  6. P. D. Yoder, K. Gaertner, U. Krumbein, and W. Fichtner, Optimized Terminal Current Calculation for Monte Carlo Device Simulation, IEEE Transactions on Computer Aided Design 16, pp. 1082-1087, Oct. 1997.
  7. P. D. Yoder, U. Krumbein, K. Gaertner, N. Sasaki and W. Fichtner, Statistical enhancement of terminal current estimation for Monte Carlo device simulation, VLSI Design 6, pp. 303-306, 1998.
  8. F. M. Bufler, P. D. Yoder, and W. Fichtner, Strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs, VLSI-Design 13, No.1-4, pp.163-167, 2001.
  9. N. Asli, A. F. Shulekin, P. D. Yoder, M. I. Vexler, I. V. Grekhov, and P. Seegebrecht, Impact of oxide damage on the light emission properties of MOS tunnel structures, Solid-State Electronics 48, pp. 731-737, 2004.
  10. P. D. Yoder, M. I. Vexler, A. F. Shulekin, N. Asli, S. V. Gastev, I. V. Grekhov, P. Seegebrecht, S. E. Tyaginov, and H. Zimmermann, Luminescence Spectra of an Al/SiO2/p-Si Tunnel Metal Oxide Semiconductor Structure, Journal of Applied Physics 98, pp. 83511-83523, 2005.
  11. P. D. Yoder and E. J. Flynn, Linear theory of the quasi-unipolar photodiode, IEEE Journal of Lightwave Technology 24, pp. 1937-1945, 2006.
  12. N. Terizhandur and P. D. Yoder, Perfectly Matched Layer Boundary Conditions for Quantum Phase Space Transport, Physics Letters A 367, pp. 288-290, 2007.
  13. P. D. Yoder and E. J. Flynn, Quasi-unipolar photodetection for enhanced bandwidth and optical saturation power, Applied Physics Letters 91, pp. 062114-062116, 2007.
  14. P. D. Yoder, Bandwidth and Charge Balancing of the Partially Depleted Absorber Photodiode, IEEE Journal of Quantum Electronics 43, pp. 992-997, 2007.
  15. S.-C. Shen, Y. Zhang, D.-W. Yoo, J.-B. Limb, J.-H. Rhou, P. D. Yoder and R. D. Dupuis, Performance of Deep Ultraviolet GaN Avalanche Photodiodes, IEEE Photonics Technology Letters 91, pp. 1744-1746, 2007.
  16. N. Z. Butt, P. D. Yoder, and M. A. Alam, Soft Error Trends and New Physical Model for Ionization Dose Effects in Double Gate Z-RAM Cell, IEEE Transactions on Nuclear Science 54, pp. 2363-2370, 2007.
  17. A. Venkatachalam , P. D. Yoder, B. Klein and A. Kulkarni, Nitride Band-Structure Model in a Quantum Well Laser Simulator, Optical and Quantum Electronics 40, pp. 295-299, 2008.
  18. S. Sridharan , A. Venkatachalam and P. D. Yoder, Electrothermal Analysis of AlGaN/GaN High Electron Mobility Transistors, Journal of Computational Electronics 7, pp. 236-239, 2008.
  19. E. Avrutin, T. Stanko, B. Witzigmann and P. D. Yoder, Introduction to the OQE special issue on numerical simulation of optoelectronic devices, Optical and Quantum Electronics 40, pp. 1075-1076, 2008.
  20. E. Moore, T. Utschig, K. Haas, B. Klein, P. D. Yoder, Y. Zhang and M. Hayes, Evaluating the integration of Tablet PC technology for the enhancement of synchronous distributed education courses, IEEE Transactions on Learning Technologies 1, pp. 105-116, 2008.
  21. S. Sridharan and P. D. Yoder, Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN, IEEE Electron Device Letters 29, pp. 1190-1192, 2008.
  22. R. D. Dupuis, J.-H. Ryou, S.-C. Shen, P. D. Yoder, Y. Zhang, H. J. Kim, S. Choi and Z. Lochner, Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes, Journal of Crystal Growth 310, pp. 5217-5222, 2008.
  23. S. Sridharan , P. D. Yoder, S.-C. Shen, J.-H. Ryou and R.D. Dupuis, Geiger Mode Simulation of GaN Homojunction Avalanche Photodetectors, Physica Status Solidi C 6, pp. S662-S665, 2009.
  24. J.-H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. S. Kim, S. Choi, H. J. Kim, and R.D. Dupuis, Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells, IEEE Journal of Special Topics on Quantum Electronics 15, pp. 1080-1091, 2009. (INVITED PAPER).
  25. H. Pan, A. Beling, H.Chen, J. C. Campbell and P. D. Yoder, A High-Linearity Modified Uni-Traveling Carrier Photodiode with Offset Effects of Nonlinear Capacitance, IEEE Journal of Lightwave Technology 27, pp. 4435-4439, 2009.
  26. S. Choi, H. J. Kim, Y. Zhang, X. Bai, D. Yoo, J. Limb, J.-H. Ryou, S.-C. Shen, P. D. Yoder and R. D. Dupuis, Geiger-mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates, IEEE Photonics Technology Letters 21, pp. 1526-1528, 2009.
  27. A. Venkatachalam , B. Klein, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, Design Strategies for InGaN-based Green Lasers, IEEE Journal of Quantum Electronics 46, pp. 238-245, 2010.
  28. M. Messer, J. H. Panchal, V. Krishnamurthy, B. Klein, P. D. Yoder, J. K. Allen and F. Mistree, Model Selection Under Limited Information Using a Value-of-information-based Indicator, Journal of Mechanical Design 132, pp. 121008-121020, 2010.
  29. H. J. Kim, S. Choi, S.-S. Kim, J.-H. Ryou, P. D. Yoder, R.D. Dupuis, A. M. Fischer and F. A. Ponce, Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes, Applied Physics Letters 96, pp. 101102-101104, 2010.
  30. P. D. Yoder, M. Grupen and R. K. Smith, Demonstration of Intrinsic Tristability in Double-Barrier Resonant Tunneling Diodes with the Wigner Transport Equation, IEEE Transactions on Electron Devices 57, pp. 3265-3274, 2010.
  31. J. Liu, Y. Zhang, Z. Lochner, S.-S. Kim, H. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Wei, K. Wei, K. Sun, A. Fischer and F. Ponce, Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapor deposition, Journal of Crystal Growth 272, pp. 272-277, 2011.
  32. P. D. Yoder, S. Sridharan , Samuel Graham, S.-S. Shen, J.-H. Ryou and R. D. Dupuis, Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations, Physica Status Solidi C 8, pp. 2285-2287, 2011.
  33. Z. Lochner, H. J. Kim, Y.-C. Lee, Y. Zhang, S. Choi, S.-C. Shen, P. D. Yoder, J.-H. Ryou and R. D. Dupuis, NpN-GaN/InxGa1-xN heterojunction bipolar transistor on free-standing GaN substrate, Applied Physics Letters 99, pp. 193501-193503, 2011.
  34. Md. M. Satter and P. D. Yoder, Lateral Carrier Confinement and Threshold Current Reduction in Scaled GaN Based QW Lasers with Deeply Etched Mesa, Optical and Quantum Electronics 42, pp. 747-754, 2011.
  35. S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhang, Z. Lochner, P. D. Yoder, and J.-H. Ryou, GaN/InGaN Heterojunction Bipolar Transistors with fT > 5.3 GHz, IEEE Electron Device Letters 32, pp. 1065-1067, 2011.
  36. S. Sridharan , A. Christensen, A. Venkatachalam , S. Graham and P. D. Yoder, Temperature and Doping Dependent Anisotropic Stationary Electron Velocity in Bulk Wurtzite GaN, IEEE Electron Device Letters 32, pp. 1522-1524, 2011.
  37. Md. M. Satter , J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, Design and Analysis of 250nm AlInN Laser Diodes on AlN Substrates using Tapered Electron Blocking Layers, IEEE Journal of Quantum Electronics 48, pp. 703-711, 2012.
  38. Md. M. Satter , Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, Polarization Matching in AlGaN-Based Multiple Quantum Well Deep Ultraviolet Laser Diodes on AlN Substrates using Quaternary AlInGaN Barriers, IEEE Journal of Lightwave Technology 30, pp. 3017-3025, 2012.
  39. S. Choi, M.-H. Ji, J. Kim, H. J. Kim, Md. M. Satter , P. D. Yoder, J.-H. Ryou, R. D. Dupuis, A. M. Fischer and F. Ponce, Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers, Applied Physics Letters 101, pp. 703-711, 2012.
  40. Md. M. Satter , Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, R. D. Dupuis and P. D. Yoder, AlGaN-Based Vertical Injection Laser Diodes using Inverse Tapered P-waveguide for Efficient Hole Transport, IEEE Journal of Quantum Electronics, in press, 2014.
  41. P. D. Yoder and S. Sridharan , Beyond intervalley transfer: damped Bloch oscillation and negative differential drift velocity at very high fields in wide bandgap III-nitride materials, Physica Status Solidi C, in press, 2014.