2026 Impurity band formation in doped AlN: A Green’s function approach
AIP Advances 16, 045003 · Asif Billah and P. Douglas Yoder
The Yoder group develops predictive, physics-based computational tools and uses them to understand, design, and optimize electronic and photonic devices—from single photon detectors and III-nitride lasers to quantum transport and millimeter-wave sources.
Projects combine first-principles physical understanding with numerical methods and device-level design. Current work spans single photon detection, piezo-acoustic devices, ultra wide bandgap impurity bands, first principles piezoelectric materials, and nonlinear high field transport. Recent publications also demonstrate active work in GaN traveling charge domain oscillators and AlN electronic materials.
Modeling avalanche initiation, breakdown, electrothermal effects, and device optimization in III-nitride SPADs.
Emerging devicesCoupled electromechanical transport and wave propagation in polarization-engineered wurtzite heterostructures.
Materials & transportElectronic structure and charge transport associated with deep donor and acceptor states in ultra wide bandgap semiconductors.
High-frequency electronicsNonlinear charge domain dynamics and direct generation of high frequency oscillations in III-nitride structures.
NanoelectronicsNon-equilibrium quantum transport, resonant tunneling, multistability, and nanoscale device physics.
OptoelectronicsElectronic and optical simulation of blue, green, and ultraviolet semiconductor laser structures.
Recent publications show the group moving from atomistic material properties through impurity band physics to device design. The complete publication history remains available on the publications page.
AIP Advances 16, 045003 · Asif Billah and P. Douglas Yoder
physica status solidi (b) 263, e202500050 · Hang Cui, P. Douglas Yoder, and William Alan Doolittle
physica status solidi (a) 217, 2000154 · Karan Mehta and P. Douglas Yoder
Research in the group rewards students who enjoy understanding how devices work at a fundamental level and then turning that understanding into predictive simulation.
Strong backgrounds in mathematics, physics, and scientific or object-oriented programming are especially valuable. Ph.D. projects emphasize original modeling and device-physics research; M.S. and undergraduate projects are scoped to preparation and available time.
We welcome problems at the interface of semiconductor physics, numerical modeling, materials, and device design.
Academic and industrial collaborations can range from interpreting unexpected device behavior to developing new physical models, simulation capability, or design strategies for emerging devices.
Dr. P. D. Yoder is an Associate Professor in the School of Electrical and Computer Engineering at Georgia Tech. He received the B.S.E.E. degree with highest honors from Cornell University and graduate degrees from the University of Illinois at Urbana-Champaign. Before joining Georgia Tech, he held positions at the Swiss Federal Institute of Technology, Bell Laboratories, and Agere Systems.
His group seeks deeper understanding of microscopic physical processes and macroscopic phenomena in semiconductor structures and devices, and applies that understanding to the design of new electronic and photonic devices.
Semiconductor photonics GRA and Special Projects opportunities are anticipated. Prospective students with strong preparation in mathematics, physics, and programming are encouraged to get in touch.